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QPD1035L

Name: Qorvo QPD1035L
Brand: Qorvo
SKU: 772-QPD1035L
Price: 354.97 EUR
Availability: InStock

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Mouser No:

772-QPD1035L

Mfr. No:

QPD1035L

Mfr.:

Qorvo

Description:

GaN FETs 30W, DC - 6GHz, Flanged

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

QPD1035L Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Qorvo QPD1035L

In Stock: 90

Stock:: 90

Can Dispatch Immediately

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On Order:: 50
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	354,97 €	354,97 €
	272,14 €	6.803,50 €
Full Reel (Order in multiples of 50)
	272,14 €	13.607,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
RoHS:
Mounting Style:	Flanged
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	50.4 W
Brand:	Qorvo
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Development Kit:	QPD1035EVB0- 50V, QPD1035LEVB0-50V
Gain:	12.1 dB
Maximum Drain Gate Voltage:	145 V
Maximum Operating Frequency:	6 GHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Output Power:	50 W
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Series:	QPD1035L
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	GaN
Type:	Power Transistor

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Datasheet

QPD1035L Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

QPD1035 GaN RF Power Transistors

Qorvo QPD1035 GaN RF Power Transistors are 40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply. The Qorvo QPD1035 transistors feature an input pre-match, making it ideal for broadband amplifiers in pulsed and CW operations. The devices are lead-free and RoHS-compliant.