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R6007RND3TL1

Name: ROHM Semiconductor R6007RND3TL1
Brand: ROHM Semiconductor
SKU: 755-R6007RND3TL1
Price: 1.17 EUR
Availability: InStock

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Mouser No:

755-R6007RND3TL1

Mfr. No:

R6007RND3TL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO252 650V 21A N-CH MOSFET

Datasheet:

R6007RND3TL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor R6007RND3TL1

In Stock: 5.600

Stock:: 5.600 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 5600 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,17 €	1,17 €
	0,83 €	8,30 €
	0,691 €	69,10 €
	0,665 €	332,50 €
	0,654 €	654,00 €
Full Reel (Order in multiples of 2500)
	0,633 €	1.582,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	940 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	7 V
Qg - Gate Charge:	17.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	22 ns
Product Type:	MOSFETs
Rise Time:	12 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

R6007RND3TL1 Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Super Junction-MOS EN & KN MOSFETs

ROHM Semiconductor Super Junction-MOS EN and KN MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN series is offered in 600V and 650V versions and is recommended for power supply circuits requiring noise countermeasures. The fast-switching KN series is offered in 600V, 650V, and 800V variants and is recommended for power supply circuits demanding lower loss and greater efficiency.