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R6020ENXC7G

Name: ROHM Semiconductor R6020ENXC7G
Brand: ROHM Semiconductor
SKU: 755-R6020ENXC7G
Price: 2.84 EUR
Availability: InStock

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Mouser No:

755-R6020ENXC7G

Mfr. No:

R6020ENXC7G

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO220 600V 20A N-CH MOSFET

Datasheet:

R6020ENXC7G Datasheet

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In Stock: 5.811

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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	2,02 €	20,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FM-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	196 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	60 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 155 C
Pd - Power Dissipation:	68 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	67 ns
Forward Transconductance - Min:	5 S
Product Type:	MOSFETs
Rise Time:	53 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	Power MOSFET
Typical Turn-Off Delay Time:	150 ns
Typical Turn-On Delay Time:	35 ns
Part # Aliases:	R6020ENX

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Datasheet

R6020ENXC7G Datasheet

PCN

Product Change Notification 2024-07-15 (PDF)

Specification Sheets

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TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

R60/R65 N-Ch Power MOSFETs

ROHM Semiconductor R60/R65 N-Ch Power MOSFETs provide a single channel output with 600V or 650V drain-source voltage in a TO-220FM-3 package. The R60/R65 MOSFETs have an operating temperature from -55°C to +150°C and power dissipation options of 40W, 46W, 48W, 53W, 68W, 74W, or 86W. The R60/R65 N-Ch Power MOSFETs are ideal for switching applications.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.