RGS00TS65HRC11

ROHM Semiconductor
755-RGS00TS65HRC11
RGS00TS65HRC11

Mfr.:

Description:
IGBTs 8s Short-Circuit Tolerance, 650V 50A, TO-247N, Field Stop Trench IGBT for Automotive

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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In Stock: 432

Stock:
432 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 432 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
7,26 € 7,26 €
5,28 € 52,80 €
3,81 € 381,00 €
450 Quote

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
REACH - SVHC:
Si
TO-247N-3
Through Hole
Single
650 V
2.1 V
30 V
88 A
326 W
- 40 C
+ 175 C
AEC-Q101
Tube
Brand: ROHM Semiconductor
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 450
Subcategory: IGBTs
Part # Aliases: RGS00TS65HR
Unit Weight: 13,413 g
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Attributes selected: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not
intended for volume automotive production without ROHM
Semiconductors prior approval.

Please contact ROHM Semiconductor for Production Part Approval
Process (PPAP) requirements or contact a Mouser Technical Sales
Representative for further assistance.

5-0617-50

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101-rated automotive IGBTs available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that reduces the size and improves the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. ROHM Semiconductor RGS IGBTs provide increased energy savings in various high voltage and high current applications.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.