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RM4N650IP

Name: Rectron RM4N650IP
Brand: Rectron
SKU: 583-RM4N650IP
Price: 0.39 EUR
Availability: OutOfStock

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Mouser No:

583-RM4N650IP

Mfr. No:

RM4N650IP

Mfr.:

Rectron

Datasheet:

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Minimum: 2400 Multiples: 800

Unit Price:

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Ext. Price:

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Qty.	Unit Price	Ext. Price
	0,399 €	957,60 €
	0,38 €	2.128,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Rectron
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-251-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	1.2 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	46 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Rectron
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Fall Time:	8 ns
Forward Transconductance - Min:	4 S
Product Type:	MOSFETs
Rise Time:	3 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	6 ns
Unit Weight:	340 mg