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TP65B110HRU-TR

Name: Renesas Electronics TP65B110HRU-TR
Brand: Renesas Electronics
SKU: 227-TP65B110HRU-TR
Price: 6.28 EUR
Availability: InStock

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Mouser No:

227-TP65B110HRU-TR

Mfr. No:

TP65B110HRU-TR

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 110mohm GaN BDS in TOLT

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TP65B110HRU-TR Datasheet

ECAD Model:

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More Information

Learn more about Renesas Electronics TP65B110HRU-TR

In Stock: 73

Stock:: 73 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1300)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	6,28 €	6,28 €
	4,44 €	44,40 €
	3,69 €	369,00 €
	3,29 €	1.645,00 €
Full Reel (Order in multiples of 1300)
	2,92 €	3.796,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Tradename:	SuperGaN
Brand:	Renesas Electronics
Country of Assembly:	MY
Country of Diffusion:	Not Available
Country of Origin:	JP
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Series:	TP65B110HRU
Factory Pack Quantity:	1300
Subcategory:	Transistors

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Datasheet

TP65B110HRU-TR Datasheet

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.