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M1F45M12W2-1LA

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Mouser No:

511-M1F45M12W2-1LA

Mfr. No:

M1F45M12W2-1LA

Mfr.:

STMicroelectronics

Description:

MOSFET Modules Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V 47.5 mOhm

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Datasheet:

M1F45M12W2-1LA Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFET Modules
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	SiC
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	7.5 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFET Modules
Qualification:	AEC-Q100
Factory Pack Quantity:	11
Subcategory:	Discrete and Power Modules
Type:	Automotive Grade Power Module

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TARIC:: 8541290000
CNHTS:: 8504409100
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

M1F45M12W2-1LA ACEPACK DMT‑32 Power Module

STMicroelectronics M1F45M12W2-1LA ACEPACK DMT‑32 Power Module is designed for hybrid and electric vehicles' DC/DC converter stage. The M1F45M12W2-1LA uses a four-pack topology with an integrated NTC. The device incorporates four second-generation silicon carbide power MOSFETs from STMicroelectronics. The M1F45M12W2-1LA balances energy efficiency and high switching frequency, enabling complex topologies with high power density and efficiency. The STMicroelectronics device has an AlN-insulated substrate that ensures excellent thermal performance, and the grooved design enhances creepage distance for safety.