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STB25N018M9

Name: STMicroelectronics STB25N018M9
Brand: STMicroelectronics
SKU: 511-STB25N018M9
Price: 2.8 EUR
Availability: OutOfStock

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Mouser No:

511-STB25N018M9

Mfr. No:

STB25N018M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 250 V, 14 mOhm typ., 54 A MDmesh M9 Power MOSFET in a D2PAK package

Complete Your Design

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

STB25N018M9 Datasheet (PDF)

ECAD Model:

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Availability

Stock:: 0

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Minimum: 1000 Multiples: 1000

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	2,80 €	2.800,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	31 ns
Product Type:	MOSFETs
Rise Time:	3.6 ns
Series:	MDmesh M9
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	61 ns
Typical Turn-On Delay Time:	23 ns
Unit Weight:	1,444 g

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Datasheet

STB25N018M9 Datasheet (PDF)

TARIC:: 8541290000

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.