STDRIVEG212QTR

STMicroelectronics
511-STDRIVEG212QTR
STDRIVEG212QTR

Mfr.:

Description:
Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 699

Stock:
699 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,27 € 2,27 €
1,69 € 16,90 €
1,55 € 38,75 €
1,38 € 138,00 €
1,31 € 327,50 €
1,26 € 630,00 €
1,23 € 1.230,00 €
Full Reel (Order in multiples of 3000)
1,19 € 3.570,00 €
1,16 € 6.960,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
Gate Driver
Half-Bridge
SMD/SMT
QFN-18
2 Driver
3 Output
1.8 A
10.3 V
18 V
Inverting, Non-Inverting
22 ns
13 ns
- 40 C
+ 125 C
Reel
Cut Tape
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Development Kit: EVLSTDRIVEG212
Maximum Turn-Off Delay Time: 65 ns
Maximum Turn-On Delay Time: 65 ns
Moisture Sensitive: Yes
Operating Supply Current: 900 uA
Output Voltage: 220 V
Product Type: Gate Drivers
Propagation Delay - Max: 65 ns
Rds On - Drain-Source Resistance: 4.8 Ohms
Shutdown: Shutdown
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: STDRIVE
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Attributes selected: 0

Datasheet

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USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

STDRIVEG212 220V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG212 220V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 220V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.

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