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STGW100H65FB2-4

Name: STMicroelectronics STGW100H65FB2-4
Brand: STMicroelectronics
SKU: 511-STGW100H65FB2-4
Price: 7.84 EUR
Availability: InStock

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Mouser No:

511-STGW100H65FB2-4

Mfr. No:

STGW100H65FB2-4

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa

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Datasheet:

STGW100H65FB2-4 Datasheet (PDF)

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In Stock: 42

Stock:: 42 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,84 €	7,84 €
	4,89 €	48,90 €
	3,78 €	378,00 €
	3,77 €	2.262,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-4
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	145 A
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	HB2
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	4,430 g

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Datasheet

STGW100H65FB2-4 Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower V_CE(sat) combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.