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STGW20H60DF

Name: STMicroelectronics STGW20H60DF
Brand: STMicroelectronics
SKU: 511-STGW20H60DF
Price: 2.61 EUR
Availability: OutOfStock

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Mouser No:

511-STGW20H60DF

Mfr. No:

STGW20H60DF

Mfr.:

STMicroelectronics

Description:

IGBTs 600V 20A Hi Spd TrenchGate FieldStop

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Datasheet:

STGW20H60DF Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 14 Weeks Estimated factory production time.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,61 €	2,61 €
	1,42 €	14,20 €
	0,955 €	95,50 €
	0,912 €	547,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	40 A
Pd - Power Dissipation:	167 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGW20H60DF
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	20 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	38 g

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Datasheet

STGW20H60DF Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.