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STGW75H65DFB2-4

Name: STMicroelectronics STGW75H65DFB2-4
Brand: STMicroelectronics
SKU: 511-STGW75H65DFB2-4
Price: 5 EUR
Availability: OutOfStock

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Mouser No:

511-STGW75H65DFB2-4

Mfr. No:

STGW75H65DFB2-4

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac

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Datasheet:

STGW75H65DFB2-4 Datasheet (PDF)

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,00 €	5,00 €
	3,57 €	35,70 €
	3,50 €	350,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	115 A
Pd - Power Dissipation:	357 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	4,430 g

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Datasheet

STGW75H65DFB2-4 Datasheet (PDF)

PCN

Product Change Notification 2025-5-3 (PDF)

TARIC:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541290065
ECCN:: EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at T_J=150°C, minimal collector current turn off tail, and very low saturation voltage (V_CE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.