STGWT40HP65FB

STMicroelectronics
511-STGWT40HP65FB
STGWT40HP65FB

Mfr.:

Description:
IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT

ECAD Model:
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In Stock: 848

Stock:
848 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,86 € 2,86 €
1,56 € 15,60 €
1,04 € 104,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-3P-3
Through Hole
Single
650 V
1.6 V
- 30 V, 30 V
80 A
283 W
- 55 C
+ 175 C
STGWT40HP65FB
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 80 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 300
Subcategory: IGBTs
Unit Weight: 5,500 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.