It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STH410N4F7-6AG

Name: STMicroelectronics STH410N4F7-6AG
Brand: STMicroelectronics
SKU: 511-STH410N4F7-6AG
Price: 4.75 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STH410N4F7-6AG

Mfr. No:

STH410N4F7-6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STH410N4F7-6AG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 736

Stock:: 736 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 736 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	4,75 €	4,75 €
	3,16 €	31,60 €
	2,35 €	235,00 €
	2,30 €	1.150,00 €
Full Reel (Order in multiples of 1000)
	1,86 €	1.860,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	H2PAK-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	1.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	120 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	365 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	STripFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	44.2 ns
Product Type:	MOSFETs
Rise Time:	198 ns
Series:	STH410N4F7-6AG
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	108 ns
Typical Turn-On Delay Time:	35 ns
Unit Weight:	1,380 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STH410N4F7-6AG Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low R_DS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET III™ Power MOSFETs

STMicroelectronics STripFET III™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with a gate structure. The resulting STripFET Power MOSFET exhibits a high current and low R_DS(on). These STripFET Power MOSFETs have improved specific on-resistance for lower conduction losses. The planar technology used in these devices is ideal for high-efficiency, low-voltage systems.