TSCDF20065G1

Taiwan Semiconductor
821-TSCDF20065G1
TSCDF20065G1

Mfr.:

Description:
SiC Schottky Diodes 20A, 650V, SiC Schottky Diode

Datasheet:
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Availability

Stock:
0

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Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,07 € 4,07 €
2,66 € 26,60 €
2,07 € 207,00 €
1,74 € 870,00 €
1,62 € 1.620,00 €
1,51 € 3.020,00 €

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220AC-2
Single
20 A
650 V
1.38 V
128 A
20 uA
- 55 C
+ 175 C
AEC-Q101
Tube
Brand: Taiwan Semiconductor
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2000
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 455 V
Unit Weight: 1,650 g
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Attributes selected: 0

Datasheet

Models

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TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99

TSCD 650V SiC Schottky Diodes

Taiwan Semiconductor TSCD 650V SiC Schottky Diodes feature a maximum junction temperature of +175°C and ensure robust performance under challenging conditions. Taiwan Semiconductor TSCD diodes have an MPS structure that enhances ruggedness to forward current surge events, making them suitable for high-demand scenarios. These diodes facilitate high-speed switching and boast a high forward surge capability, enabling efficient operation in various power supply systems. Additionally, the positive temperature coefficient on VF ensures stability across temperature ranges.

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