TSM150NB04DCR RLG

Taiwan Semiconductor
821-TSM150NB04DCRRLG
TSM150NB04DCR RLG

Mfr.:

Description:
MOSFETs 40V, 38A, Dual N-Channel Power MOSFET

Datasheet:
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In Stock: 4.964

Stock:
4.964 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 4964 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,39 € 1,39 €
0,886 € 8,86 €
0,587 € 58,70 €
0,468 € 234,00 €
0,423 € 423,00 €
Full Reel (Order in multiples of 2500)
0,384 € 960,00 €
0,378 € 1.890,00 €
0,376 € 3.760,00 €
0,375 € 9.375,00 €

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PDFN-56-8
N-Channel
2 Channel
40 V
38 A
15 mOhms
- 20 V, 20 V
4 V
18 nC
- 55 C
+ 150 C
40 W
Enhancement
AEC-Q101
Reel
Cut Tape
Brand: Taiwan Semiconductor
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Fall Time: 3 ns
Forward Transconductance - Min: 32 S
Product Type: MOSFETs
Rise Time: 7 ns
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 12 ns
Typical Turn-On Delay Time: 6 ns
Part # Aliases: TSM150NB04DCR
Unit Weight: 372,608 mg
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Attributes selected: 0

Datasheet

Models

SPICE Models

TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Dual N-Channel Power MOSFETs

Taiwan Semiconductor Dual N-Channel Power MOSFETs feature low drain-source on-state resistance, minimizing conductive losses. The devices enable a low gate charge for fast switching. Taiwan Semiconductor Dual N-Channel Power MOSFETs are ideal for BLDC motor control, battery power management, and DC-DC converter applications.

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