LMG1210RVRR

Texas Instruments
595-LMG1210RVRR
LMG1210RVRR

Mfr.:

Description:
Gate Drivers 1.5-A 3-A 200-V ha l f bridge gate drive A 595-LMG1210RVRT

Datasheet:
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Learn more about Texas Instruments LMG1210RVRR

In Stock: 592

Stock:
592 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 170
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
3,50 € 3,50 €
2,65 € 26,50 €
2,43 € 60,75 €
2,20 € 220,00 €
Full Reel (Order in multiples of 3000)
2,20 € 6.600,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
LMG1210RVRT
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
5,44 €
Min:
1

Similar Product

Texas Instruments LMG1210RVRT
Texas Instruments
Gate Drivers 1.5-A 3-A 200-V ha l f bridge gate drive A 595-LMG1210RVRR
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
WQFN-19
2 Driver
2 Output
3 A
4.75 V
18 V
500 ps
500 ps
- 40 C
+ 125 C
LMG1210
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: TH
Country of Diffusion: US
Country of Origin: TH
Logic Type: TTL
Maximum Turn-Off Delay Time: 18 ns
Maximum Turn-On Delay Time: 18 ns
Moisture Sensitive: Yes
Off Time - Max: 18 ns
Operating Supply Current: 380 uA
Output Voltage: 5 V
Product Type: Gate Drivers
Propagation Delay - Max: 20 ns
Rds On - Drain-Source Resistance: 400 mOhms
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: GaN
Unit Weight: 26,800 mg
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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG1210 200V Half-Bridge MOSFET & GaN FET Drivers

Texas Instruments LMG1210 200V Half-Bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) Drivers are designed for ultra-high frequency and high-efficiency applications. The device is ideal for applications with adjustable deadtime capability, very small propagation delay, and 3.4ns high-side low-side matching to optimize system efficiency. The LMG1210 MOSFET and GaN FET Drivers offer an internal LDO, which ensures a gate-drive voltage of 5V regardless of the supply voltage.

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