LMG2610RRGT

Texas Instruments
595-LMG2610RRGT
LMG2610RRGT

Mfr.:

Description:
Gate Drivers 650-V 170/248-m? GaN half-bridge for ACF

Datasheet:
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Learn more about Texas Instruments LMG2610RRGT

In Stock: 275

Stock:
275 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
12,92 € 12,92 €
10,22 € 102,20 €
9,55 € 238,75 €
8,80 € 880,00 €
Full Reel (Order in multiples of 250)
8,80 € 2.200,00 €
8,12 € 4.060,00 €
2.500 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
REACH - SVHC:
Half-Bridge Drivers
Half-Bridge
SMD/SMT
VQFN-40
2 Driver
2 Output
3 A
7.5 V
26 V
Non-Inverting
14.9 ns
12.5 ns
- 40 C
+ 125 C
LMG2610
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Development Kit: UCC28782EVM-030
Input Voltage - Max: 26 V
Input Voltage - Min: 10 V
Maximum Turn-Off Delay Time: 43 ns
Maximum Turn-On Delay Time: 12.5 ns
Moisture Sensitive: Yes
Output Voltage: 19.95 V
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 170 mOhms
Shutdown: No Shutdown
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: GaN
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Attributes selected: 0

Datasheet

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG2610 GaN Half-Bridge IC

Texas Instruments LMG2610 GaN Half-Bridge IC is a 650V GaN power-FET half bridge for < 75W active-clamp flyback (ACF) converters in switch-mode power supply applications. The LMG2610 reduces component count, simplifies design and reduces board space by integrating gate drivers, half-bridge power FETs, bootstrap diode, and high-side gate-drive level shifter in a 9mm by 7mm QFN package. The asymmetric GaN FET resistances are optimised for ACF operating conditions. Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor. It allows the low-side thermal pad to be connected to the cooling PCB power ground.

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