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LMG3522R050RQSR

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Mouser No:

595-LMG3522R050RQSR

Mfr. No:

LMG3522R050RQSR

Mfr.:

Texas Instruments

Description:

Gate Drivers 650-V 50-m? GaN FET with integrated driv

Datasheet:

LMG3522R050RQSR Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Product:	GaN FET
Mounting Style:	SMD/SMT
Package/Case:	VQFN-52
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3522R050
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Input Voltage - Max:	18 V
Input Voltage - Min:	7.5 V
Moisture Sensitive:	Yes
Operating Supply Current:	9.7 mA
Product Type:	Gate Drivers
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs

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Datasheet

LMG3522R050RQSR Datasheet

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

LMG3522R050 650V GaN FET

Texas Instrument LMG3522R050 650V GaN FET with integrated driver and protection targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3522R050 integrates a silicon driver that enables switching speeds up to 150Vns. TI offers integrated precision gate bias, which results in higher switching SOA when compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers minimal ringing and clean switching in hard-switching power supply topologies. The adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns. This control can be used to actively control EMI and optimize switching performance.