LMG3526R050RQSR

Texas Instruments
595-LMG3526R050RQSR
LMG3526R050RQSR

Mfr.:

Description:
Gate Drivers 650-V 50-m? GaN FET with integrated driv

Datasheet:
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In Stock: 1.940

Stock:
1.940 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
16,15 € 16,15 €
11,52 € 115,20 €
10,98 € 1.098,00 €
10,80 € 2.700,00 €
10,42 € 5.210,00 €
10,02 € 10.020,00 €
Full Reel (Order in multiples of 2000)
8,85 € 17.700,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
GaN FET
SMD/SMT
VQFN-52
- 40 C
+ 125 C
LMG3526R050
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Input Voltage - Max: 18 V
Input Voltage - Min: 7.5 V
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
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Attributes selected: 0

Datasheet

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CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

LMG3526R050 650V GaN FET

Texas Instrument LMG3526R050 650V GaN FET with integrated driver and protection targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3526R050 integrates a silicon driver that enables switching speeds up to 150V/ns. TI offers integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers minimal ringing and clean switching in hard-switching power supply topologies. The adjustable gate drive strength allows control of the slew rate from 15V/ns to 150V/ns. This control can be used to control EMI and actively optimize switching performance.

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