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SSM6L40TU,LF

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See Product Specifications

Mouser No:

757-SSM6L40TULF

Mfr. No:

SSM6L40TU,LF

Mfr.:

Toshiba

Description:

MOSFETs LowON Res MOSFET ID=1.6A VDSS=30V

Datasheet:

SSM6L40TU,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6L40TU,LF

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UF-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	1.4 A, 1.6 A
Rds On - Drain-Source Resistance:	122 mOhms, 226 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V, 2 V
Qg - Gate Charge:	5.1 nC, 2.9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	U-MOSIII
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Forward Transconductance - Min:	1.9 S, 1 S
Product Type:	MOSFETs
Series:	SSM6L40TU
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel, 1 P-Channel
Unit Weight:	7 mg

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Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

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Datasheet

SSM6L40TU,LF Datasheet (PDF)

Application Notes

Models

Simulation Model

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541210095
ECCN:: EAR99

U-MOSIII MOSFETs

Toshiba U-MOSIII MOSFETs are single- and dual-channel MOSFETs ideal for high-speed switching applications. These Toshiba MOSFETs offer a low drain to source on-resistance and a low voltage gate drive.