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TK5R3E08QM,S1X

Name: Toshiba TK5R3E08QM,S1X
Brand: Toshiba
SKU: 757-TK5R3E08QMS1X
Price: 2.24 EUR
Availability: InStock

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Mouser No:

757-TK5R3E08QMS1X

Mfr. No:

TK5R3E08QM,S1X

Mfr.:

Toshiba

Description:

MOSFETs UMOS10 TO-220AB 80V 5.3mohm

Datasheet:

TK5R3E08QM,S1X Datasheet (PDF)

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In Stock: 5.912

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,24 €	2,24 €
	0,929 €	9,29 €
	0,773 €	77,30 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	5.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	55 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Toshiba
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	81 ns
Product Type:	MOSFETs
Rise Time:	81 ns
Series:	UMOS X-H
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	130 ns
Typical Turn-On Delay Time:	99 ns
Part # Aliases:	TK5R3E08QM,S1X(S

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Datasheet

TK5R3E08QM,S1X Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

80V N-Channel U-MOS X-H MOSFETs

Toshiba 80V N-Channel U-MOS X-H MOSFETs provide high-speed switching, a small gate charge, and low power dissipation. The U-MOS X-H MOSFETs offer an excellent drain-source on-resistance (R_DS(ON)) x transmission resistance x input capacitance (C_iss) value leading to high conductivity and low gate driver losses. The reduced output capacitance (C_OSS) lowers the output charge (Q_OSS), increasing the switching efficiency of these devices. These MOSFETs are suitable for switching voltage regulators, motor drivers, and high-efficiency DC-DC converters.