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TPW1R005PL,L1Q

Name: Toshiba TPW1R005PL,L1Q
Brand: Toshiba
SKU: 757-TPW1R005PLL1Q
Price: 3.42 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TPW1R005PLL1Q

Mfr. No:

TPW1R005PL,L1Q

Mfr.:

Toshiba

Description:

MOSFETs POWER MOSFET TRANSISTOR PD=170W

Datasheet:

TPW1R005PL,L1Q Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TPW1R005PL,L1Q

In Stock: 12.987

Stock:: 12.987

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On Order:: 4.745
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,42 €	3,42 €
	2,25 €	22,50 €
	1,58 €	158,00 €
	1,42 €	710,00 €
	1,38 €	1.380,00 €
	1,37 €	3.425,00 €
Full Reel (Order in multiples of 5000)
	1,21 €	6.050,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	45 V
Id - Continuous Drain Current:	300 A
Rds On - Drain-Source Resistance:	1.65 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Qg - Gate Charge:	122 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	170 W
Channel Mode:	Enhancement
Tradename:	U-MOSIX-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Product Type:	MOSFETs
Series:	U-MOSIX-H
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	104 mg

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Datasheet

TPW1R005PL,L1Q Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.

U-MOSIX-H Low Voltage Enhancement Mode MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the latest Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.
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