TRS10A65F,S1Q

Toshiba
757-TRS10A65F,S1Q
TRS10A65F,S1Q

Mfr.:

Description:
SiC Schottky Diodes RECT 650V 10A RDL SIC SKY

Datasheet:
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Learn more about Toshiba TRS10A65F,S1Q

In Stock: 97

Stock:
97 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,67 € 5,67 €
3,48 € 34,80 €
2,57 € 257,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220F-2L
Single
10 A
650 V
1.45 V
79 A
500 nA
+ 175 C
Tube
Brand: Toshiba
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 650 V
Part # Aliases: TRS10A65F,S1Q(S2
Unit Weight: 1,830 g
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Attributes selected: 0

Datasheet

CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.

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