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XPH6R30ANB,L1XHQ

Name: Toshiba XPH6R30ANB,L1XHQ
Brand: Toshiba
SKU: 757-XPH6R30ANBL1XHQ
Price: 1.69 EUR
Availability: InStock

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Mouser No:

757-XPH6R30ANBL1XHQ

Mfr. No:

XPH6R30ANB,L1XHQ

Mfr.:

Toshiba

Description:

MOSFETs PD=132W F=1MHZ AEC-Q101

Datasheet:

XPH6R30ANB,L1XHQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba XPH6R30ANB,L1XHQ

In Stock: 11.962

Stock:: 11.962 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 5000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,69 €	1,69 €
	1,08 €	10,80 €
	0,727 €	72,70 €
	0,577 €	288,50 €
	0,53 €	530,00 €
	0,504 €	1.260,00 €
Full Reel (Order in multiples of 5000)
	0,504 €	2.520,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOP-Advance-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	6.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	52 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	132 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	U-MOSVIII-H
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	39 ns
Unit Weight:	360 mg

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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

XPH6R30ANB,L1XHQ Datasheet (PDF)

Application Notes

Automotive Discrete Semiconductor MBD Introductory

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

Automotive U-MOSVIII-H Power MOSFETs

Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. These devices feature low on-resistance with proprietary technology using a Cu connector. The Toshiba U-MOSVIII-H Power MOSFETs have a narrowed gate threshold voltage range of 2.5V to 3.5V, which reduces switching time tolerance.