IRFR320TRPBF-BE3

Vishay Semiconductors
78-IRFR320TRPBF-BE3
IRFR320TRPBF-BE3

Mfr.:

Description:
MOSFETs TO252 400V 3.1A N-CH MOSFET

Datasheet:
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Learn more about Vishay Semiconductors IRFR320TRPBF-BE3

In Stock: 24.475

Stock:
24.475 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,16 € 2,16 €
1,39 € 13,90 €
0,955 € 95,50 €
0,762 € 381,00 €
0,754 € 754,00 €
Full Reel (Order in multiples of 2000)
0,704 € 1.408,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
400 V
3.1 A
1.8 Ohms
- 20 V, 20 V
2 V
20 nC
- 55 C
+ 150 C
42 W
Enhancement
Reel
Cut Tape
Brand: Vishay Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Fall Time: 13 ns
Forward Transconductance - Min: 1.7 S
Product Type: MOSFETs
Rise Time: 14 ns
Factory Pack Quantity: 2000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 10 ns
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

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