SIHB080N60E-GE3

Vishay Semiconductors
78-SIHB080N60E-GE3
SIHB080N60E-GE3

Mfr.:

Description:
MOSFETs N-CHANNEL 600V

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In Stock: 4.244

Stock:
4.244 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,32 € 5,32 €
2,82 € 28,20 €
2,58 € 258,00 €
2,43 € 1.215,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
600 V
35 A
80 mOhms
- 30 V, 30 V
5 V
63 nC
- 55 C
+ 150 C
227 W
Enhancement
Tube
Brand: Vishay Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 31 ns
Forward Transconductance - Min: 4.6 S
Product Type: MOSFETs
Rise Time: 96 ns
Series: SIHB E
Factory Pack Quantity: 1000
Subcategory: Transistors
Typical Turn-Off Delay Time: 37 ns
Typical Turn-On Delay Time: 31 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

4th Gen E Series MOSFETs

Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). Vishay Semiconductors 4th Gen E MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.