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SIA921EDJ-T4-GE3

Name: Vishay SIA921EDJ-T4-GE3
Brand: Vishay / Siliconix
SKU: 78-SIA921EDJ-T4-GE3
Price: 0.86 EUR
Availability: InStock

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Mouser No:

78-SIA921EDJ-T4-GE3

Mfr. No:

SIA921EDJ-T4-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs -20V Vds 12V Vgs PowerPAK SC-70

Datasheet:

SIA921EDJ-T4-GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SIA921EDJ-T4-GE3

In Stock: 5.150

Stock:: 5.150 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,869 €	0,87 €
	0,541 €	5,41 €
	0,353 €	35,30 €
	0,273 €	136,50 €
	0,246 €	246,00 €
Full Reel (Order in multiples of 3000)
	0,24 €	720,00 €
	0,202 €	1.212,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-70-6
Transistor Polarity:	P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4.5 A
Rds On - Drain-Source Resistance:	59 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	7.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10 ns
Forward Transconductance - Min:	11 S
Product Type:	MOSFETs
Rise Time:	20 ns
Series:	SIA
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 P-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	2,442 g

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Datasheet

SIA921EDJ-T4-GE3 Datasheet

Models

R-C Thermal Model Parameters

PCN

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.