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SISS5708DN-T1-BE3

Name: Vishay SISS5708DN-T1-BE3
Brand: Vishay / Siliconix
SKU: 78-SISS5708DN-T1-BE3
Price: 2.12 EUR
Availability: InStock

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Mouser No:

78-SISS5708DN-T1-BE3

Mfr. No:

SISS5708DN-T1-BE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs N-Channel 150 V (D-S) MOSFET 150 C 23 m 10V

Datasheet:

SISS5708DN-T1-BE3 Datasheet

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In Stock: 5.818

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,12 €	2,12 €
	1,37 €	13,70 €
	0,937 €	93,70 €
	0,747 €	373,50 €
	0,698 €	698,00 €
Full Reel (Order in multiples of 3000)
	0,698 €	2.094,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	27 A
Rds On - Drain-Source Resistance:	23 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	12.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	65.7 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	9 ns
Forward Transconductance - Min:	24 S
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	SISS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

SISS5708DN-T1-BE3 Datasheet

PCN

Product Change Notification 2024-11-22 (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.