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SUP70090E-GE3

Name: Vishay SUP70090E-GE3
Brand: Vishay / Siliconix
SKU: 78-SUP70090E-GE3
Price: 3.47 EUR
Availability: InStock

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Mouser No:

78-SUP70090E-GE3

Mfr. No:

SUP70090E-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs 100V Vds 20V Vgs TO-220

Datasheet:

SUP70090E-GE3 Datasheet

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In Stock: 215

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,47 €	3,47 €
	1,78 €	17,80 €
	1,61 €	161,00 €
	1,40 €	700,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	7.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	50 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Tradename:	ThunderFET
Packaging:	Tube
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	45 ns
Forward Transconductance - Min:	38 S
Product Type:	MOSFETs
Rise Time:	27 ns
Series:	SUP700
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	2 g

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Datasheet

SUP70090E-GE3 Datasheet

Application Notes

Torque Recommendations for TO-220 Devices

Models

Technical Resources

TO-220AB

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

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Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.