SIR5812DP-T1-RE3

Name: Vishay SIR5812DP-T1-RE3
Brand: Vishay
SKU: 78-SIR5812DP-T1-RE3
Price: 1.19 EUR
Availability: InStock

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Mouser No:

78-SIR5812DP-T1-RE3

Mfr. No:

SIR5812DP-T1-RE3

Mfr.:

Vishay

Datasheet:

ECAD Model:

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Stock:: 7.190 Can Dispatch Immediately

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Factory Lead Time:: 2 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Qty.	Unit Price	Ext. Price
	1,19 €	1,19 €
	0,749 €	7,49 €
	0,497 €	49,70 €
	0,388 €	194,00 €
	0,353 €	353,00 €
Full Reel (Order in multiples of 3000)
	0,315 €	945,00 €

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	45.3 A
Rds On - Drain-Source Resistance:	13.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	50 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	7 ns
Series:	SIR
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	TrenchFET Gen V Power MOSFET
Typical Turn-Off Delay Time:	10 ns
Typical Turn-On Delay Time:	11 ns