CAB004M12GM4

Wolfspeed
941-CAB004M12GM4
CAB004M12GM4

Mfr.:

Description:
Discrete Semiconductor Modules SiC, Module, 4mO, 1200V, 48 mm, GM4, Half-Bridge, Industrial

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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More Information
Learn more about Wolfspeed CAB004M12GM4

Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
47 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
196,64 € 196,64 €
195,65 € 1.956,50 €

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: Discrete Semiconductor Modules
RoHS:  
Modules
Half Bridge
5.4 V
- 8 V, + 19 V
Press Fit
- 40 C
+ 150 C
Brand: Wolfspeed
Configuration: Half-Bridge
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Id - Continuous Drain Current: 200 A
Pd - Power Dissipation: 584 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 7.2 mOhms
Factory Pack Quantity: 18
Subcategory: Discrete and Power Modules
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 1.8 V
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Attributes selected: 0

Datasheet

TARIC:
8541290000
CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

WolfPACK™ SiC-Based Power Modules

Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than is achievable with either multiple discrete devices or with larger, high-ampacity modules.

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