CAB008A12GM3T

Wolfspeed
941-CAB008A12GM3T
CAB008A12GM3T

Mfr.:

Description:
Discrete Semiconductor Modules SiC, Module, 8mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM

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In Stock: 13

Stock:
13 Can Dispatch Immediately
Factory Lead Time:
3 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
169,72 € 169,72 €
164,91 € 1.649,10 €

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: Discrete Semiconductor Modules
RoHS:  
SiC Modules
Half Bridge
SiC
- 4 V, + 15 V
Screw Mount
51 mm x 42.5 mm
- 40 C
+ 150 C
WolfPACK
Tray
Brand: Wolfspeed
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Id - Continuous Drain Current: 182 A
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 8 mOhms
Factory Pack Quantity: 18
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.6 V
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Attributes selected: 0

TARIC:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
ECCN:
EAR99

WolfPACK™ SiC-Based Power Modules

Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than is achievable with either multiple discrete devices or with larger, high-ampacity modules.