CAS175M12BM3

Wolfspeed
941-CAS175M12BM3
CAS175M12BM3

Mfr.:

Description:
Discrete Semiconductor Modules 1200V, 175A SiC

Datasheet:
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Availability

Stock:
0

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On Order:
20
Factory Lead Time:
41
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
297,90 € 297,90 €
271,73 € 2.717,30 €

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: Discrete Semiconductor Modules
RoHS:  
SiC Modules
Half Bridge
SiC
1.8 V
- 8 V, + 8 V
Screw Mount
106.4 mm x 60.44 mm x 30.8 mm
- 40 C
+ 150 C
Bulk
Brand: Wolfspeed
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Id - Continuous Drain Current: 228 A
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 10.4 mOhms
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.6 V
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99

62mm Silicon Carbide Half-Bridge Modules

Wolfspeed 1200V and 1700V 62mm Silicon Carbide (SiC) Half-Bridge Modules combine the system benefits of SiC with a robust and low-inductance layout. The half-bridge modules feature increased system efficiency due to SiC's low switching and conduction losses. These power modules include a low-inductance internal layout, enabling maximum voltage utilization with minimal overshoot and ringing. The half-bridge modules are chosen from aluminum nitride ceramic for reduced thermal resistance with robust CTE matching and silicon nitride ceramic for sustained maximum junction temperature operation.

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