CAS310M17BM3

Wolfspeed
941-CAS310M17BM3
CAS310M17BM3

Mfr.:

Description:
Discrete Semiconductor Modules SiC, Module, 310A, 1700V, 62mm, BM3, Half-Bridge, Industrial

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In Stock: 11

Stock:
11 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
745,70 € 745,70 €
657,75 € 6.577,50 €

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: Discrete Semiconductor Modules
RoHS:  
SiC Modules
Half Bridge
SiC
Screw Mount
Module
- 40 C
+ 150 C
Bulk
Brand: Wolfspeed
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 56 ns
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 5 mOhms
Rise Time: 72 ns
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

1700V BM SiC Half-Bridge Modules

Wolfspeed 1700V BM Silicon Carbide (SiC) Half-Bridge Power Modules feature an industry standard 62mm footprint, copper baseplate, and aluminum nitride insulator. These modules provide ultra-low loss, high-frequency operation, a zero turn-off tail current from MOSFET, and zero reverse recoveries from diodes. The half-bridge modules offer a 62mm form factor to enable the system retrofit and increase efficiency due to low switching and conduction losses of the SiC. These modules operate within a -40°C to +150°C virtual junction temperature range, 310A current (IDS), and -40°C to +125°C case temperature range. The Wolfspeed 1700V BM SiC half-bridge modules are ideally used in induction heating, motor drives, renewables, and EV fast charging applications.

62mm Silicon Carbide Half-Bridge Modules

Wolfspeed 1200V and 1700V 62mm Silicon Carbide (SiC) Half-Bridge Modules combine the system benefits of SiC with a robust and low-inductance layout. The half-bridge modules feature increased system efficiency due to SiC's low switching and conduction losses. These power modules include a low-inductance internal layout, enabling maximum voltage utilization with minimal overshoot and ringing. The half-bridge modules are chosen from aluminum nitride ceramic for reduced thermal resistance with robust CTE matching and silicon nitride ceramic for sustained maximum junction temperature operation.