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E3M0032120J2-TR

Name: Wolfspeed E3M0032120J2-TR
Brand: Wolfspeed
SKU: 941-E3M0032120J2-TR
Price: 11.86 EUR
Availability: InStock

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Mouser No:

941-E3M0032120J2-TR

Mfr. No:

E3M0032120J2-TR

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC, MOSFET, 32mO, 1200V, TO-263-7 XL T&R, Automotive, Gen3

Datasheet:

E3M0032120J2-TR Datasheet (PDF)

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In Stock: 713

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	11,86 €	11,86 €
	8,32 €	83,20 €
	7,37 €	737,00 €
	6,27 €	3.135,00 €
Full Reel (Order in multiples of 800)
	6,27 €	5.016,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	74 A
Rds On - Drain-Source Resistance:	55 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 19 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	108 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	341 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	8 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	19 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Silicon Carbide Power MOSFET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

E3M0032120J2-TR Datasheet (PDF)

PCN

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

E-Series Automotive Silicon Carbide Power MOSFETs

Wolfspeed E-Series Automotive Silicon Carbide Power MOSFETs are automotive qualified, PPAP capable, N-channel enhancement mode and humidity-resistant MOSFETs. The components offer low switching losses and a high figure of merit and are optimised for use in EV HVAC motor drives, EV onboard chargers and high-voltage DC-DC converters.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.