AFGH4L60T120RW-STD

onsemi
863-FGH4L60T120RWSTD
AFGH4L60T120RW-STD

Mfr.:

Description:
IGBTs FS7 1200V 60A SCR IGBT TO247 4L IGBT STAND-ALONE (LOW COST)

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 450

Stock:
450 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,08 € 8,08 €
5,55 € 55,50 €
4,17 € 500,40 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
Si
TO-247-4
Through Hole
Single
1.66 V
30 V
73 A
289 W
- 55 C
+ 175 C
AFGH4L60T120RW-STD
Tube
Brand: onsemi
Continuous Collector Current Ic Max: 60 A
Country of Assembly: Not Available
Country of Diffusion: KR
Country of Origin: CN
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBTs
Factory Pack Quantity: 30
Subcategory: Transistors
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs

onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs use the novel field stop 7th generation IGBT technology and a Gen7 diode in a 4-lead package. This 1200V collector-to-emitter (VCES) rated IGBT comes in a TO-247-4LD package. It is rated at 1.66V collector-to-emitter saturation voltage (VCE(SAT)) and a collector current (IC) of 60A. The onsemi AFGH4L60T120RWx-STD offers good performance with low on-state voltage and low switching losses for both hard and soft switching topologies in automotive applications.