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FDP083N15A-F102

Name: onsemi FDP083N15A-F102
Brand: onsemi
SKU: 512-FDP083N15A_F102
Price: 5.03 EUR
Availability: InStock

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Mouser No:

512-FDP083N15A_F102

Mfr. No:

FDP083N15A-F102

Mfr.:

onsemi

Description:

MOSFETs 150V N-CHANNEL POWERTRENCH MOSFET

Datasheet:

FDP083N15A-F102 Datasheet (PDF)

ECAD Model:

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In Stock: 11.406

Stock:: 11.406 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,03 €	5,03 €
	2,66 €	26,60 €
	2,42 €	242,00 €
	2,25 €	1.125,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	105 A
Rds On - Drain-Source Resistance:	6.85 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	64.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	231 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Tube
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	US
Country of Origin:	CN
Fall Time:	26 ns
Forward Transconductance - Min:	139 S
Product Type:	MOSFETs
Rise Time:	58 ns
Series:	FDP083N15A
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Part # Aliases:	FDP083N15A_F102
Unit Weight:	2 g

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Datasheet

FDP083N15A-F102 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
ECCN:: EAR99

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and R_DS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low R_DS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low R_DS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering