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NCD57090FDWR2G

Name: onsemi NCD57090FDWR2G
Brand: onsemi
SKU: 863-NCD57090FDWR2G
Price: 2.38 EUR
Availability: InStock

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Mouser No:

863-NCD57090FDWR2G

Mfr. No:

NCD57090FDWR2G

Mfr.:

onsemi

Description:

Gate Drivers ISOLATED DRIVER IN 8-PIN WIDE BODY PACKAGE

Datasheet:

NCD57090FDWR2G Datasheet

ECAD Model:

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More Information

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In Stock: 584

Stock:: 584 Can Dispatch Immediately

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Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,38 €	2,38 €
	1,80 €	18,00 €
	1,66 €	41,50 €
	1,42 €	142,00 €
	1,33 €	332,50 €
	1,30 €	650,00 €
Full Reel (Order in multiples of 1000)
	1,29 €	1.290,00 €
	1,26 €	2.520,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Gate Drivers
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Series:	NCD57090
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	PH
Country of Diffusion:	US
Country of Origin:	PH
Product Type:	Gate Drivers
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs

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Datasheet

NCD57090FDWR2G Datasheet

Material Composition Disclosure

USHTS:: 8542390090
ECCN:: EAR99

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.

NCD57090 & NCV57090 IGBT/MOSFET Gate Drivers

onsemi NCD57090 and NCV57090 IGBT/MOSFET Gate Drivers are high-current, single-channel gate drivers for IGBTs and MOSFETs, with 5kVrms internal galvanic isolation. The NCD57090 and NCV57090 provide high system efficiency and reliability in high-power applications. These devices accept complimentary inputs and, depending on the pin configuration, offer options such as Active Miller Clamp, negative power supply, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. The NCD57090 and NCV57090 accommodate a wide range of input bias voltage and signal levels from 3.3V to 20.0V.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.