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UJ4SC075011B7S

Name: onsemi UJ4SC075011B7S
Brand: onsemi
SKU: 431-UJ4SC075011B7S
Price: 23.78 EUR
Availability: InStock

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Mouser No:

431-UJ4SC075011B7S

Mfr. No:

UJ4SC075011B7S

Mfr.:

onsemi

Description:

SiC MOSFETs 750V/11MOSICFETG4TO263

Datasheet:

UJ4SC075011B7S Datasheet

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In Stock: 322

Stock:: 322 Can Dispatch Immediately

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Factory Lead Time:: 28 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	23,78 €	23,78 €
	18,79 €	187,90 €
	17,58 €	8.790,00 €
Full Reel (Order in multiples of 800)
	16,99 €	13.592,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	104 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	75 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	357 W
Channel Mode:	Enhancement
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12.8 ns
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Rise Time:	22.4 ns
Series:	UJ4SC
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	17.6 ns

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Datasheet

UJ4SC075011B7S Datasheet

PCN

Product Change Notification 2025-4-11 (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

750V UJ4C/SC SiC FETs in D2PAK-7L Package

UnitedSiC / Qorvo 750V UJ4C/SC SiC FETs in D2PAK-7L Package are available in multiple on-resistance options from 9mΩ to 60mΩ. Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class R_DS x Area Figure of Merit, resulting in the lowest conduction losses in a small die. The D2PAK-7L package provides reduced inductance from compact internal connection loops, which, along with the included Kelvin source connection, results in low switching loss, enabling higher frequency operation and improved system power density. Five parallel gull-wing source connections allow low inductance and high current usage. The silver-sinter die-attach results in very low thermal resistance for maximum heat extraction on standard PCBs and IMS substrates with liquid cooling. These SiC FETs offer a low body diode, ultra-low gate charge, and a 4.8V threshold voltage that allows 0V to 15V drive. The standard gate-drive characteristics of the FETs make them ideal replacements for Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UJ4C/SC 750V Gen 4 SiC FETs

onsemi UJ4C/SC 750V Gen 4 SiC FETs are a high-performance series delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can significantly enhance system performance without changing gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the onsemi UJ4C/SC FETs.