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IPU95R3K7P7AKMA1

Name: Infineon IPU95R3K7P7AKMA1
Brand: Infineon Technologies
SKU: 726-IPU95R3K7P7AKMA1
Price: 1.14 EUR
Availability: InStock

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Mouser No:

726-IPU95R3K7P7AKMA1

Mfr. No:

IPU95R3K7P7AKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs LOW POWER_NEW

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IPU95R3K7P7AKMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPU95R3K7P7AKMA1

In Stock: 2.153

Stock:: 2.153 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,14 €	1,14 €
	0,50 €	5,00 €
	0,445 €	44,50 €
	0,406 €	203,00 €
	0,35 €	350,00 €
	0,32 €	480,00 €
	0,305 €	1.372,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-251-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	950 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	3.7 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	22 W
Channel Mode:	Enhancement
Tradename:	CoolMOS
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	40 ns
Product Type:	MOSFETs
Rise Time:	23 ns
Series:	P7
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	7ns
Part # Aliases:	IPU95R3K7P7 SP001792320
Unit Weight:	387,110 mg

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Filter Document:

Datasheet

IPU95R3K7P7AKMA1 Datasheet (PDF)

Application Notes

MOSFET CoolMOS P7 950V (PDF)

Product Catalogs

Technical Resources

MOSFET 950V CoolMOS P7 (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

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Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.