IS66WVS8M8FALL-104NLI

ISSI
870-WVS8M8FALL104NLI
IS66WVS8M8FALL-104NLI

Mfr.:

Description:
DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about ISSI IS66WVS8M8FALL-104NLI

In Stock: 139

Stock:
139
Can Dispatch Immediately
On Order:
100
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 15
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,45 € 4,45 €
4,27 € 42,70 €

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
PSRAM (Pseudo SRAM)
64 Mbit
8 bit
104 MHz
SOIC-8
8 M x 8
7 ns
1.65 V
1.95 V
- 40 C
+ 85 C
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 100
Subcategory: Memory & Data Storage
Supply Current - Max: 15 mA
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Attributes selected: 0

Datasheet

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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320299
ECCN:
3A991.b.2.a

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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