NVMFS6H818NT1G

onsemi
863-NVMFS6H818NT1G
NVMFS6H818NT1G

Mfr.:

Description:
MOSFETs TRENCH 8 80V NFET

Datasheet:
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Learn more about onsemi NVMFS6H818NT1G

In Stock: 1.466

Stock:
1.466 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,79 € 2,79 €
1,87 € 18,70 €
1,38 € 138,00 €
1,22 € 610,00 €
1,14 € 1.140,00 €
Full Reel (Order in multiples of 1500)
1,14 € 1.710,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SO-8FL-4
N-Channel
1 Channel
80 V
123 A
3.7 mOhms
- 20 V, 20 V
2 V
46 nC
- 55 C
+ 175 C
136 W
Enhancement
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MY
Fall Time: 21 ns
Product Type: MOSFETs
Rise Time: 98 ns
Series: NVMFS6H818N
Factory Pack Quantity: 1500
Subcategory: Transistors
Typical Turn-Off Delay Time: 49 ns
Typical Turn-On Delay Time: 22 ns
Unit Weight: 750 mg
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
MXHTS:
85412999
ECCN:
EAR99

PowerTrench® MOSFETs

onsemi PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  

NVMFS6H8x Power MOSFETs

onsemi NVMFS6H8x Power MOSFETs offer 80V, single N-channel, and a small footprint for a compact design. These power MOSFETs are available in 2.1mΩ, 2.8mΩ, 3.7mΩ, and 3.2mΩ RDS(on) resistance ranges. Features include low RDS(on) to minimize conduction losses, low QG, and low capacitance. The NVMFS6H8x power MOSFETs are RoHS compliant, PPAP capable, and AEC-Q101 qualified. These power MOSFETs operate at -55°C to 175°C operating temperature range.

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (RDS(ON), ultra-low gate charge (Qg), and low (Qg) x RDS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Qg and Qoss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

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