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PSMQC042N10LS2_R2_00201

Name: Panjit PSMQC042N10LS2_R2_00201
Brand: Panjit
SKU: 241-PSMQC042N10LS2
Price: 2.64 EUR
Availability: InStock

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See Product Specifications

Mouser No:

241-PSMQC042N10LS2

Mfr. No:

PSMQC042N10LS2_R2_00201

Mfr.:

Panjit

Description:

MOSFETs 100V 4.2m ohms Excellect low FOM MOSFET for PD3.0 100W solution

Datasheet:

PSMQC042N10LS2_R2_00201 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Panjit PSMQC042N10LS2_R2_00201

In Stock: 5.659

Stock:: 5.659 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,64 €	2,64 €
	1,88 €	18,80 €
	1,37 €	137,00 €
	1,08 €	540,00 €
	1,05 €	1.050,00 €
Full Reel (Order in multiples of 3000)
	1,05 €	3.150,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5060-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	109 A
Rds On - Drain-Source Resistance:	4.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	58 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Panjit
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	4.8 ns
Product Type:	MOSFETs
Rise Time:	6.2 ns
Series:	PSM
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	9.6 ns
Unit Weight:	0,080 mg

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Datasheet

PSMQC042N10LS2_R2_00201 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

80V & 100V Shield Gate Trench N-Channel MOSFETs

PANJIT 80V and 100V Shield Gate Trench (SGT) N-Channel MOSFETs feature a low R_DS(ON) and a high switching speed. These devices offer low reverse transfer capacitance and utilize green molding compounds, as specified in the IEC 61249 standard. These PANJIT MV enhancement mode MOSFETs are lead-free and compliant with EU RoHS 2.0, and are 100% UIS/Rg tested. These devices are available in various low-profile packages that save space, including DFN3333S-8L, DFN5060-8L, DFN5060S-8L, TO-220AB-L, TO-252AA, TO-263, and TOLL. Typical applications include PD chargers, adapters, lighting, home appliances, and DC-DC converters.

100V N-Channel Enhancement Mode MOSFETs

Panjit 100V N-Channel Enhancement Mode MOSFETs feature low R_DS(ON) and high-switching speed. These MOSFETs consist of low reverse transfer capacitance and green molding compounds as per IEC 61249 standard. The 100V enhancement mode MOSFETs are lead-free and compliant with EU RoHS 2.0. These MOSFETs are 100% UIS / Rg tested. Typical applications include a PD charger, adapter, lighting, home appliance, and DC-DC converter.