SCT4045DLLTRDC

ROHM Semiconductor
755-SCT4045DLLTRDC
SCT4045DLLTRDC

Mfr.:

Description:
SiC MOSFETs TOLL 750V 37A SIC

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2.008

Stock:
2.008 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
12,19 € 12,19 €
9,39 € 93,90 €
8,27 € 827,00 €
7,37 € 3.685,00 €
6,88 € 6.880,00 €
Full Reel (Order in multiples of 2000)
6,88 € 13.760,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
SMD/SMT
TOLL-9
N Channel
1 Channel
750 V
37 A
4.8 V
63 nC
+ 175 V
133 W
Enhancement
Brand: ROHM Semiconductor
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 10 ns
Forward Transconductance - Min: 9.3 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: SiC MOSFET
Product Type: SiC MOSFETS
Rise Time: 16 ns
Factory Pack Quantity: 2000
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 5.1 ns
Typical Turn-On Delay Time: 27 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [RDS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (ID) and source current (IS) (TC=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.