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SI4459ADY-T1-GE3

Name: Vishay SI4459ADY-T1-GE3
Brand: Vishay Semiconductors
SKU: 781-SI4459ADY-T1-GE3
Price: 2.45 EUR
Availability: InStock

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Mouser No:

781-SI4459ADY-T1-GE3

Mfr. No:

SI4459ADY-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs -30V Vds 20V Vgs SO-8

Datasheet:

SI4459ADY-T1-GE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay Semiconductors SI4459ADY-T1-GE3

In Stock: 8.216

Stock:: 8.216 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,45 €	2,45 €
	1,59 €	15,90 €
	1,10 €	110,00 €
	0,903 €	451,50 €
	0,845 €	845,00 €
Full Reel (Order in multiples of 2500)
	0,747 €	1.867,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	129 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	7.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	20 ns
Forward Transconductance - Min:	24 S
Product Type:	MOSFETs
Rise Time:	16 ns
Series:	SI4
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	SI4459ADY-GE3
Unit Weight:	750 mg

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Datasheet

SI4459ADY-T1-GE3 Datasheet

Application Notes

Mounting LITTLE FOOT‚ SO-8 Power MOSFETs

Models

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Si4 & Si7 P-Channel (D-S) MOSFETs

Vishay Semiconductor Si4 and Si7 P-Channel (D-S) MOSFETs features a small footprint and on-resistance rating down to 1.2V. The Vishay / Siliconix Si4 and Si7 offers 20V and 30V VDS in a PowerPAK SO-8 package.

Si4 TrenchFET® Power MOSFETs

Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V_GS and V_DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R_gand UIS tested.