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SI8806DB-T2-E1

Name: Vishay SI8806DB-T2-E1
Brand: Vishay / Siliconix
SKU: 78-SI8806DB-T2-E1
Price: 0.86 EUR
Availability: InStock

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See Product Specifications

Mouser No:

78-SI8806DB-T2-E1

Mfr. No:

SI8806DB-T2-E1

Mfr.:

Vishay / Siliconix

Description:

MOSFETs 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8

Datasheet:

SI8806DB-T2-E1 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SI8806DB-T2-E1

In Stock: 23.950

Stock:: 23.950 Can Dispatch Immediately

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Factory Lead Time:: 1 Week Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,86 €	0,86 €
	0,611 €	6,11 €
	0,381 €	38,10 €
	0,262 €	131,00 €
	0,221 €	221,00 €
Full Reel (Order in multiples of 3000)
	0,187 €	561,00 €
	0,169 €	1.014,00 €
	0,157 €	1.413,00 €
	0,143 €	3.432,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	MicroFoot-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	3.9 A
Rds On - Drain-Source Resistance:	47 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	900 mW
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Product Type:	MOSFETs
Series:	SI8
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	120 mg

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Datasheet

SI8806DB-T2-E1 Datasheet

Models

Technical Resources

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MicroFoot® Power MOSFETs

Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (R_DS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The Vishay Siliconix MicroFoot Power MOSFETs low on-resistance also means a lower voltage drop across the load switch to prevent an unwanted under-voltage lockout.