Vishay Newest Transistors
Vishay SiJK5100E N-Channel MOSFET
11.11.2024
11.11.2024
TrenchFET® Gen V power MOSFET with 100V drain-source voltage and 536W maximum power dissipation.
Vishay SiEH4800EW 80V TrenchFET® Gen IV N-Channel MOSFET
10.25.2024
10.25.2024
Comes in a PowerPAK® 8mm x 8mm BWL package with an on-resistance of 0.00115Ω.
Vishay MXP120A MaxSiC™ 1200V N-Channel MOSFETs
08.26.2024
08.26.2024
Feature fast switching speed, 3μs short circuit withstand time, and 139W maximum power dissipation.
Vishay SiJK140E N-Channel 40 V (D-S) MOSFET
07.01.2024
07.01.2024
Features TrenchFET® Gen V power technology ideal for synchronous rectification and automation.
Vishay Superjunction MOSFETs in PowerPAK® 10 x 12
05.17.2024
05.17.2024
Features power technology, optimizes efficiency, and minimizes power loss during conduction.
Vishay SiRS5700DP N-Channel 150V (D-S) MOSFET
01.29.2024
01.29.2024
TrenchFET® Gen V power MOSFET with a very low RDS x Qg figure-of-merit (FOM).
Vishay POWERPAK® 1212 MOSFETs
01.09.2024
01.09.2024
Ideal for switching applications and boasts a die-on resistance of approximately 1mΩ.
Vishay SIH Series MOSFETs
07.31.2023
07.31.2023
Offers 4th generation E series technology in a standard TO package.
Vishay SiHR080N60E N-Channel Power MOSFET
07.27.2023
07.27.2023
Fourth-generation 600V E series power MOSFET in a PowerPAK® 8 x 8LR package.
Vishay SiSD5300DN 30V N-Channel MOSFET
07.27.2023
07.27.2023
TrenchFET® Gen V power MOSFET utilizing source flip technology that enhances thermal performance.
Vishay Half Bridge IGBTs
07.10.2023
07.10.2023
Features Trench IGBT technology and current ratings of 100A, 150A, and 200A.
Vishay SIP32433 Single-Channel eFuses
11.30.2022
11.30.2022
Integrate multiple control and protection features.
Vishay EMIPAK PressFit Power Modules
09.26.2022
09.26.2022
Designed to facilitate a reliable performance in rugged 15A to 150A applications.
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Nexperia BUK9Q N-Channel Trench MOSFET
09.09.2025
09.09.2025
Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
07.03.2025
07.03.2025
Normally off e-mode devices that deliver superior performance and very low on-state resistance.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
07.03.2025
07.03.2025
40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETs
07.01.2025
07.01.2025
These FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.
ROHM Semiconductor Small Signal Dual Channel MOSFETs
06.30.2025
06.30.2025
Feature low on-resistance and fast switching, and are ideal for motor drives.
onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFET
06.23.2025
06.23.2025
Delivers excellent thermal performance and low RDS(on) in a compact 5mm x 6mm PowerFLAT package.
Littelfuse IXSJxN120R1 1,200 V SiC Power MOSFETs
06.23.2025
06.23.2025
High-performance devices designed for demanding power conversion applications.
ROHM Semiconductor Automotive 40A & 80A Power MOSFETs
06.16.2025
06.16.2025
Feature low on-resistance and are ideal for ADAS, automotive, and lighting applications.
PANJIT 50V Enhancement Mode MOSFETs
06.09.2025
06.09.2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
onsemi NVMFDx 100V Dual N-Channel Power MOSFETs
06.09.2025
06.09.2025
Features low RDS(on) values and fast switching characteristics in a space-saving DFN-8 package.
ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFET
06.04.2025
06.04.2025
Compact, high-performance MOSFET designed for low-voltage switching applications.
Infineon Technologies CoolMOS™ CM8 650V Power MOSFETs
06.03.2025
06.03.2025
Designed according to the Superjunction (SJ) principle to offer low switching and conduction losses.
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs
06.03.2025
06.03.2025
Automotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.
Torex Semiconductor XPJ101N04N8R & XPJ102N09N8R N-Channel MOSFETs
06.03.2025
06.03.2025
Features low on-resistance, reducing energy losses and improving overall system efficiency.
onsemi NXH015F120M3F1PTG Silicon Carbide (SiC) Module
05.23.2025
05.23.2025
Features 15mΩ/1200V M3S SiC MOSFET full-bridge and a thermistor with Al2O3 DBC in an F1 package.
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET
05.22.2025
05.22.2025
Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.
STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBT
05.22.2025
05.22.2025
Created by implementing an advanced proprietary trench gate field-stop structure.
Ampleon BLF981/BLF981S LDMOS Power Transistors
05.15.2025
05.15.2025
Designed for high-efficiency broadband applications across a frequency range from HF to 1400MHz.
Ampleon BLP981 LDMOS Power Transistor
05.15.2025
05.15.2025
170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.
Wolfspeed YM Six-Pack Silicon Carbide Power Modules
05.14.2025
05.14.2025
Automotive-qualified modules that are designed for seamless design integration and durability.
onsemi NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET
05.13.2025
05.13.2025
Engineered to handle high currents, which is crucial for DC-DC power conversion stages.
APC-E Silicon Carbide (SiC) MOSFETs
05.06.2025
05.06.2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Infineon Technologies 700V CoolGaN™ G5 Power Transistors
05.02.2025
05.02.2025
Designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching.
Infineon Technologies OptiMOS™ 6 200V Power MOSFETs
04.30.2025
04.30.2025
Offer excellent gate charge x RDS(on) product (FOM) and low on‑resistance RDS(on).
onsemi NVTFWS003N04XM MOSFETs
04.28.2025
04.28.2025
A low RDS(on) & capacitance in an AEC-Q101-qualified, µ8FL 3.3mm x 3.3mm small footprint package.
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