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IMZA75R008M1HXKSA1

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See Product Specifications

Mouser No:

726-IMZA75R008M1HXKS

Mfr. No:

IMZA75R008M1HXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

IMZA75R008M1HXKSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IMZA75R008M1HXKSA1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	163 A
Rds On - Drain-Source Resistance:	10.6 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	178 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	517 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	G2
Factory Pack Quantity:	240
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	IMZA75R008M1HXKSA1 SP005970686

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Datasheet

IMZA75R008M1HXKSA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 750V G1 MOSFETs

Infineon Technologies CoolSiC™ 750V G1 MOSFETs excel in performance, reliability, and robustness. The Infineon Technologies CoolSiC 750V G1 features flexible gate driving for simplified, cost-effective system design. The MOSFETs allow for optimized efficiency and power density.