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GANB8R0-040CBAZ

Name: Nexperia GANB8R0-040CBAZ
Brand: Nexperia
SKU: 771-GANB8R0-040CBAZ
Price: 1.95 EUR
Availability: InStock

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See Product Specifications

Mouser No:

771-GANB8R0-040CBAZ

Mfr. No:

GANB8R0-040CBAZ

Mfr.:

Nexperia

Description:

GaN FETs GANB8R0-040CBA/SOT8087/WLCSP16

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GANB8R0-040CBAZ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia GANB8R0-040CBAZ

In Stock: 2.584

Stock:: 2.584 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,95 €	1,95 €
	1,26 €	12,60 €
	1,24 €	62,00 €
	0,851 €	85,10 €
	0,68 €	340,00 €
	0,658 €	658,00 €
Full Reel (Order in multiples of 2500)
	0,657 €	1.642,50 €
	0,559 €	2.795,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	WLCSP-16
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	14 A
Rds On - Drain-Source Resistance:	8 mOhms
Vgs - Gate-Source Voltage:	8 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	10.1 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Pd - Power Dissipation:	15 W
Brand:	Nexperia
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Maximum Drain Gate Voltage:	40 V
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	GaN FETs
Product Type:	GaN FETs
Factory Pack Quantity:	2500
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	Bi-Directional Gallium Nitride FET
Part # Aliases:	934667631341

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Datasheet

GANB8R0-040CBAZ Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

GANB8R0-040CBA Bi-Directional GaN FET

Nexperia GANB8R0-040CBA Bi-Directional Gallium Nitride (GaN) FET is a 40V, 8.0mΩ bi-directional GaN High Electron-Mobility Transistor (HEMT) housed in a compact 1.7mm x 1.7mm Wafer Level Chip-Scale Package (WLCSP). This normally-off enhancement-mode device offers ultra-high switching speed and low on-state resistance, making the Nexperia GANB8R0-040CBA ideal for applications requiring efficient power management and high power density. The device's bidirectional capability and superior performance make it suitable for high-side load switches, overvoltage protection, and DC-to-DC converters.